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TJM4558 5425DM 20CQ60 1046625 2SD2333 ACT9353 M9839B P6P20E
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  features low cost diffused junction low leakage low forward voltage drop high current capability and similar solvents mechanical data case:jedec do-41,molded plastic terminals: axial lead ,solderable per mil- std-202,method 208 polarity: color band denotes cathode weight: 0.012ounces,0.34 grams mounting pos ition: any maximum ratings and electrical characteristics ratings at 25 ambient temperature unless otherwise specified. single phase,half wave,60 hz,resistive or inductive load. for capacitive load,derate by 20%. s fr 103 s fr 104 s fr 105 s fr 106 s fr 107 units maximum recurrent peak reverse voltage v rrm 200 400 600 800 1000 v max imum rms v oltage v rms 140 280 420 560 700 v maximum dc blocking voltage v dc 200 400 600 800 1000 v maximum average forw ard rectified current 9.5mm lead length, @t a =75 peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load @t j =125 maximum instantaneous forw ard voltage @ 1 . 0 a v f v maximum reverse current @t a =25 at rated dc blocking voltage @t a =100 maximum reverse recovery time (note1) t rr 2 0 0 ns typical junction capacitance (note2) c j pf typical thermal resistance (note3) r ja < w operating junction temperature range t j storage temperature range t stg note:1. measured with i f =0.5a, i r =1a, i rr =0.25a. s f r 101 - - - s f r 1 0 7 d o - 4 1 50 35 50 s fr 1 0 1 easily cleaned with freon,alcohol,isopropanol 100 70 a i fsm 3. thermal resistance f rom junction to ambient. a 2. measured at 1.0mhz and applied rev erse v oltage of 4.0v dc. - 55---- +150 - 55---- + 150 55 1 2 0 the plastic material carries u/l recognition 94v-0 i r 30.0 5.0 100.0 1 . 2 12 350 v o l t a g e r a n g e : 50 - - - 1000 v c u rr e n t : 1 . 0 a 100 s fr 102 1.0 a f a s t r e c o v e r y r e c t i f i e r s i f(av) dimensions in millimeters www.diode.kr diode semiconductor korea
0 1 10 0 30 10 20 10 t j =125 8.3ms single half sine-wave .2 tj=25 f=1mhz 1 .1 2 4 .4 1 .0 2 10 4 10 20 40 100 12 14 16 2 0 t j =25 pulse width=300 www.diode.kr diode semiconductor korea


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